active semiconductor devices

Active devices, such as thin-film transistors (TFT), using zinc oxide (ZnO) or high-electron mobility transistors (HEMT) using gallium nitride (GaN). The first type of transistor successfully demonstrated was a current-controlled device. For example, although specific examples of implementations have been discussed with respect to FETs, other active electronic devices may be fabricated. A semiconductor diode is a device typically made up of a single p-n junction. IBS Electronics Services. In formula (2), Ids is the drain-source (or source-drain) current in the linear regime (IVdI

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